Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDs(on) (mΩ) | Tjmax (℃) | Specifications |
---|---|---|---|---|---|---|---|---|---|
IGBT | EconoPIM2 | six-pack | 1200 | 75 | ⋅ | 150 | |||
IGBT | EconoPACK2 | 3-Phase | 1200 | 75 | ⋅ | 175 | |||
IGBT | EconoPIM3 | six-pack | 1200 | 75 | ⋅ | ||||
IGBT | EconoPACK3 | PIM | 1200 | 75 | ⋅ | ||||
IGBT | EconoDUAL | Half Bridge | 1700 | 800 | ⋅ | 175 | |||
IGBT | EconoDUAL | Half Bridge | 1200 | 900 | ⋅ | 175 | |||
IGBT | EconoDUAL | Half Bridge | 1200 | 900 | ⋅ | 175 | |||
SiC/Si Hybrid | E2 | ANPC | 1200 | 100 | 9.5 | 175 | |||
SiC/Si Hybrid | EconoPACK2 | 3-Phase | 1200 | 100 | ⋅ | 175 | |||
SiC/Si Hybrid | E4 | ANPC | 1200 | 300 | 4.3 | ||||
SiC/Si Hybrid | EconoPACK2 | 3-Phase | 1200 | 50 | ⋅ | 175 | |||
SiC/Si Hybrid | F0 | Dual Boost | 1200 | 75 | ⋅ | 175 | |||
SiC/Si Hybrid | EconoPACK2 | 3-Phase | 1200 | 75 | ⋅ | 175 | |||
SiC/Si Hybrid | EconoDUAL | Half Bridge | 1200 | 900 | ⋅ | 175 | |||
SiC MOSFET | TO-247-3 | 1200 | 75 | 37 | |||||
SiC MOSFET | TO-247-4 | 1200 | 75 | 37 | |||||
SiC MOSFET | TO-247-3 | 1200 | 42 | 75 | |||||
SiC MOSFET | TO-247-4 | 1200 | 42 | 75 | |||||
SiC MOSFET | TO-247-3 | 1700 | 9 | 650 | |||||
SiC MOSFET | TO-220F-3 | 1700 | ⋅ | 175 |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
Years of experience
Countries & Areas
Customers
㎡ Manufacturing Factory