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1700V Silicon Carbide Schottky Diode J

VDS = 1700 V
RDS(on) = 750 mΩ(VGS = 15 V)
RDS(on) = 550 mΩ(VGS = 20 V)
TJ,max = 175 ℃

SKU HCM2G0650170J Category

Description

Features

  • High blocking voltage
  • Low on-resistance with high junction temperature
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr )
  • RoHS compliant

Benefits

  • Higher System Efficiency
  • Reduce cooling requirements
  • Increased power density
  • Enabling higher frequency
  • Minimize gate ringing
  • Reduction of system complexity and cost

Applications

  • Switch Mode Power Supplies
  • DC/DC converters
  • Solar Inverters
  • Battery Chargers
  • Motor Drives

Maximum Ratings

  • Tc=25°C unless otherwise specified

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