E2 1200V 200A SIC Power Module C1
E2 series SiC MOSFET power modules, circuit structure is Half Bridge or H-Bridge. It integrates a high-performance SiC MOSFET chip and has a built-in temperature sensor. Especially suitable for solar inverter, DC-DC, energy storage and other applications——Package size: W63*L58*H16 mm
Description
Features
- Low inductive design
- Low Vcesat with high junction temperature
- Fast & soft reverse recovery anti-parallel FWD
- Low Switching Losses
Benefits
- Higher System Efficiency
- Reduce cooling requirements
- Increased power density
- Enabling higher frequency
Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Absolute Maximum Ratings
- Tc=25°C unless otherwise noted
